A history of Micron: Our timeline

Micron Ships World’s First 232-Layer NAND, Extends Technology Leadership

Micron's industry-leading 232-layer 3D NAND provides the foundation for a new wave of end-to-end technologic innovation. 凭借这一行业首创的232层进步, Micron实现了最佳的工业存储密度, 改进的性能和业界领先的I/O速度. 这有助于开启数字化的新机遇, optimization and automation in client, mobile and data center markets.

Micron Marks 50,000 Patents Milestone

Micron Technology's leadership is founded on continual innovation in memory, storage, semiconductor technologies and beyond. The milestone of achieving our 50,000th patent is a reflection of the creativity of Micron's global team members over the decades and their dedication to drive innovation forward.

• 美光公司推出了世界上最先进的1-Beta节点DRAM技术
• 美光投资高达1000亿美元在纽约克莱建造巨型工厂
• Micron invests $15 billion in new Idaho fab
• Micron ships world’s first 232-layer NAND
• 美光风险投资基金II承诺为深度科技创业公司投资2亿美元
• Micron marks 50,000 patents milestone

推出GDDR6X后，存储器首次采用PAM4多级信令

GDDR6X是世界上最快的离散图形存储解决方案, which is the first to power system bandwidth up to 1 terabyte per second (TB/s). The multilevel signaling innovation in GDDR6X has shattered conventional bandwidth limits, clocking record-breaking speeds while accelerating performance on complex graphics workloads across next-generation gaming applications.

Shipped industry’s first 176-layer NAND flash

The world’s first 176-layer 3D NAND flash memory achieves unprecedented, industry-pioneering density and performance. Together, Micron’s new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices.

美光推出业界首款四能级单元NAND固态硬盘

Micron began shipments of the industry’s first SSD built on revolutionary quad-level cell (QLC) NAND technology. The Micron® 5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, 以前使用硬盘驱动器(hdd)服务的寻址段.

美光率先推出单片8Gb DDR3 SDRAM

This single component provided a significant density increase to 1 gigabyte on a single chip. This higher density enables cost-effective, 为支持大规模而优化的高容量解决方案, data-intensive workloads.

美光推出全球最小的16nm NAND闪存器件

Micron’s 16nm process technology delivered 16GB of storage on a single die, 有史以来密度最高的平面NAND闪存. Using this process, a single 300mm wafer can create nearly 6TB of storage.

Micron Produces Industry’s First 2.5-Inch PCIe Enterprise SSD

This solution combined a high-performance PCI Express interface with a hot-swappable 2.5英寸的外形和定制的美光控制器, creating new options for enterprise performance scalability and serviceability.

美光为Ultrabook™设备推出新型低功耗DRAM

DDR3L-RS memory established a new category of “reduced-power” DRAM solutions, 为新一代高性能提供更长的电池寿命, ultrathin devices like laptops, tablets, and Ultrabook systems.
*Ultrabook is a trademark of Intel Corporation or its subsidiaries in the U.S. and/or other countries.

美光推出业界最快的客户端固态硬盘RealSSD™C300

At the time of launch, the C300 was the industry’s fastest SSD for notebook and desktop PCs. With support for the SATA III interface, this SSD delivered 6 Gb/s which significantly boosted throughput speeds for data transfers, application loads and boot times.

美光和英特尔首次推出低于40纳米的NAND闪存

This multi-level cell (MLC) NAND flash device was the industry’s first monolithic 32Gb NAND, which enabled high-density solid state storage in very small form factor devices, including digital cameras, personal music players and digital camcorders.

2004 Highlights

• 美光推出首款2gb NAND闪存沙巴体育结算平台

Micron Develops 1.3-Megapixel CMOS Image Sensor

Micron’s entry into image sensors established the company as an innovator capable of making CMOS technology with image quality rivaling charge coupled device (CCD) sensors. Today, CMOS传感器是所有类型数码相机的标准配置, 从智能手机到高端专业装备.

美光展示业界首个110nm制程1gb DDR

Micron’s 1Gb DDR was built on the most advanced process technology in the world (110nm), 超过了仍在130纳米制程的半导体巨头英特尔和AMD. This chip established Micron as the memory industry leader in both density and interface performance.

Micron Produces Industry’s First DDR DRAM

Micron’s demonstration of the Samurai double data rate (DDR) chipset proved that DDR memory could deliver performance equivalent to the competing Direct RDRAM solution, but at a much lower cost. Ultimately, DDR would become the undisputed industry-standard interface for high-performance DRAM.

美光16mb DRAM支持新Windows 3电脑.1

A milestone in density, the 16-megabit DRAM replaced Micron's mainstay 4-megabit DRAM lineup. These higher capacity chips coincided with Microsoft’s release of Windows 3.这使得PC的最小内存需求达到了1兆字节.

美光推出首款视频RAM和快速静态RAM沙巴体育结算平台

The introductions of 256K video RAM and fast static RAM broadened Micron’s product portfolio beyond traditional DRAM, 使美光成为差异化内存类型的参与者.

美光推出全球最小的256K DRAM芯片

除了作为世界上最小的256K DRAM芯片推出之外, 这款芯片也代表了DRAM密度的行业里程碑. 通过使用更大更容易读取的存储单元, the 256K DRAM was a springboard to future efficiency and profitability for the young memory startup.

Micron Ships its First 64K DRAM Product

Micron’s 64K DRAM was the first product manufactured at the company’s newly completed fabrication facility in Boise, Idaho. Micron sold its 64K DRAM into many of the first mass-produced personal computers, including the Commodore 64 home computer.

Micron Engineers Finalize 64K DRAM Design

While not the first company to make 64K DRAM, Micron’s engineers created a newer, smaller version that was lauded as the smallest 64K DRAM design in the world. This innovative design led to high-volume manufacturing of the company’s first 64K product in 1981.

Micron Technology Is Founded

Micron started as a four-person semiconductor design company in the basement of a Boise, Idaho dental office. Micron’s first contract was for the design of a 64K memory chip for Mostek Corporation.